斗球体育直播app安全访问

工作经历：

2024.11至今 斗球体育直播app安全访问 斗球体育直播app安全访问 教授

2023.01-2024.11 斗球体育直播app安全访问 斗球体育直播app安全访问 副教授

2021.04-2022.12 新加坡科技斗球体育直播app安全访问(A*STAR) 高性能计算研究所(IHPC) 二级科学家(Scientist II)

2016.11-2021.03 新加坡科技斗球体育直播app安全访问(A*STAR) 高性能计算研究所(IHPC) 一级科学家(Scientist I)

斗球体育直播app安全访问背景：

2011.09-2016.10 清华大学 摩擦学斗球体育直播app安全访问重点实验室 博士

2007.09-2011.06 北京科技大学 机械工程 学士

主要荣誉：

2024年 斗球体育直播app安全访问级海外高层次青年人才

2022年 上海市领军人才(海外)

研究方向

(1) 多主元合金微纳米力学和多尺度力学；

(2) 基于力学信息学的金属材料设计；

(3) 低维材料表界面力学行为及机理。

欢迎力学、机械和材料专业背景的博士后、硕博研究生、本科生等斗球体育直播app安全访问和学者加入。

代表性成果

多主元合金微纳米力学和多尺度力学方向：

[1] S. Chen, P. Liu, Q. Pei, Z. G. Yu, Z. H. Aitken, W. Li, Z. Wu, R. Banerjee, D. J. Srolovitz^*, P. K. Liaw^*, Y.-W. Zhang^*. Ideal Plasticity and Shape Memory of Nanolamellar High-Entropy Alloys. Sci. Adv. 2023, 9, eadi5817.

[2] S. Chen, T. Wang, X. Li, Y. Cheng^*, G. Zhang^*, H. Gao^*. Short-Range Ordering and its Impact on Thermodynamic Property of High-Entropy Alloys. Acta Mater. 2022, 238, 118201.

[3] S. Chen, Z. H. Aitken, S. Pattamatta, Z. Wu, Z. G. Yu, D. J. Srolovitz^*, P. K. Liaw^*, Y.-W. Zhang^*. Simultaneously Enhancing the Ultimate Strength and Ductility of High-Entropy Alloys via Short-Range Ordering. Nat. Commun. 2021, 12, 4953. Featured article. ESI highly cited paper.

[4] S. Chen, Z. H. Aitken, S. Pattamatta, Z. Wu, Z. G. Yu, D. J. Srolovitz^*, P. K. Liaw^*, Y.-W. Zhang^*. Crack Tip Dislocation Activity in Refractory High-Entropy Alloys. Inter. J. Mech. Sci. 2024, 262, 108753.

[5] S. Chen, Z. H. Aitken, S. Pattamatta, Z. Wu, Z. G. Yu, D. J. Srolovitz^*, P. K. Liaw^*, Y.-W. Zhang^*. Short-Range Ordering Alters the Dislocation Nucleation and Propagation in Refractory High-Entropy Alloys. Mater. Today 2023, 65, 14–25.

[6] S. Chen, Z. H. Aitken^*, Z. Wu, Z. Yu, R. Banerjee, Y.-W. Zhang. Hall-Petch and Inverse Hall-Petch Relations in High-Entropy CoNiFeAl_xCu_1-x Alloys. Mater. Sci. Eng. A 2020, 773, 138873.

基于力学信息学的金属材料设计方向：

[1] J.-M. Pu, S. Chen^*, T.-Y. Zhang^*. Machine Learning Assisted Crystallographic Reconstruction from Atom Probe Tomographic Images. J. Phys. Condens. Matter. 2025, 37, 035901.

[2] J. Zhang, H. Zhang^*, J. Xiong, S. Chen^*, G. Zhang^*. Tuning Lattice Thermal Conductivity in NbMoTaW Refractory High-Entropy Alloys: Insights from Molecular Dynamics using Machine Learning Potential. J. Appl. Phys. 2024, 136, 155106.

[3] S. Chen, Z. H. Aitken, V. Sorkin, Z. G. Yu, Z. Wu, Y.-W. Zhang^*. Modified Embedded-Atom Method Potentials for the Plasticity and Fracture Behaviors of Unary HCP Metals. Adv. Theory Simul. 2021, 2100377. Special issue.

[4] S. Chen, Y. Cheng^*, H. Gao^*. Machine Learning for High-Entropy Alloys. In: Y. Cheng, T. Wang, G. Zhang (eds) Artificial Intelligence for Materials Science. Springer Series in Materials Science 2021, 312, 21–58. Springer, Cham. (Book chapter).

[5] S. Chen, Z. H. Aitken, S. Pattamatta, Z. Wu, Z. G. Yu, D. J. Srolovitz^*, P. K. Liaw^*, Y.-W. Zhang^*. Chemical-Affinity Disparity and Exclusivity Drive Atomic Segregation, Short-Range Ordering, and Cluster Formation in High-Entropy Alloys. Acta Mater. 2021, 206, 116638.

低维材料表界面力学行为及机理方向：

[1] S. Chen, J. Gao, M. S. Bharathi, G. Zhang, V. Sorkin, H. Ramanarayan, Y.-W. Zhang^*. Origin of Ultrafast Growth of Monolayer WSe₂ via Chemical Vapor Deposition. npj Comput. Mater. 2019, 5, 28.

[2] S. Chen, J. Gao, M. S. Bharathi, G. Zhang, V. Sorkin, H. Ramanarayan, Y.-W. Zhang*. A Kinetic Monte Carlo Model for the Growth and Etching of Graphene during Chemical Vapor Deposition. Carbon 2019, 146, 399–405.

[3] S. Chen, J. Gao, M. S. Bharathi, G. Zhang, Y.-W. Zhang^*. Etching Mechanisms, Kinetics and Pattern Formation in Multilayered WSe₂. Mater. Today Adv. 2020, 7, 100075.

[4] S. Chen, J. Gao, M. S. Bharathi, G. Zhang, M. Yang, J. Chai, S. Wang, D. Chi, Y.-W. Zhang^*. Revealing the Grain Boundary Formation Mechanism and Kinetics during Polycrystalline MoS₂ Growth. ACS Appl. Mater. Interfaces 2019, 11, 46090–46100.

[5] S. Chen, J. H. R. Yune, Z.-Q. Zhang, Z. Liu, N. Sridhar, L. Y. L. Wu, S. Chng, J. Liu^*. Multiscale Modeling to Predict the Hydrophobicity of an Experimentally Designed Coating. J. Phys. Chem. C 2020, 124, 9866–9875.

[6] S. Chen, J. Gao, M. S. Bharathi, G. Zhang, V. Sorkin, H. Ramanarayan, Y.-W. Zhang^*. Unveiling the Competitive Role of Etching in Graphene Growth during Chemical Vapor Deposition. 2D Mater. 2019, 6, 015031.

^*Corresponding author.

This page is updated on 2024.12.09.